? 2008 ixys corporation, all rights reserved ds99881a(4/08) v dss = 1000v i d25 = 18a r ds(on) 340 m t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c18a i dm t c = 25 c, pulse width limited by t jm 75 a i ar t c = 25 c16a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 320 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120/4.5..27 n/lb. weight 5g g = gate d = drain s = source symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 2.5 ma r ds(on) v gs = 10v, i d = 16a, note 1 340 m features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation ? low drain to tab capacitance(<30pf) ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? fast intrinsic rectifier applications ? switched-mode and resonant-mode power supplies ? dc-dc converters ? laser drivers ? ac and dc motor controls ? robotics and servo controls advantages ? easy assembly ? space savings ? high power density isolated tab isoplus247 (ixfr) e153432 IXFR32N100P polar tm power mosfet hiperfet tm
ixys reserves the right to change limits, test conditions, and dimensions. IXFR32N100P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 16a, note 1 13 21 s c iss 14.2 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 815 pf c rss 60 pf r gi gate input resistance 1.50 t d(on) resistive switching times 50 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 16a 55 ns t d(off) r g = 1 (external) 76 ns t f 43 ns q g(on) 225 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 16a 85 nc q gd 94 nc r thjc 0.39 c /w r thcs 0.15 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 32 a i sm repetitive, pulse width limited by t jm 128 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 2.2 c i rm 15 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 16a, -di/dt = 100a/ s v r = 100v, v gs = 0v isoplus247 (ixfr) outline
? 2008 ixys corporation, all rights reserved IXFR32N100P fig. 1. output characteristics @ 25oc 0 4 8 12 16 20 24 28 32 012345678910 v ds - volts i d - amperes v gs = 15v 10v 9v 7v 8v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 15v 10v 9v 7v 8v fig. 3. output characteristics @ 125oc 0 4 8 12 16 20 24 28 32 0246810121416182022 v ds - volts i d - amperes v gs = 15v 10v 9v 7v 8v 6v fig. 4. r ds(on) normalized to i d = 16a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 32a i d = 16a fig. 5. r ds(on) normalized to i d = 16a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 5 10 15 20 25 30 35 40 45 50 55 60 65 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFR32N100P ixys ref: f_32n100p(96)3-28-08-c fig. 7. input admittance 0 5 10 15 20 25 30 35 40 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 q g - nanocoulombs v gs - volts v ds = 500v i d = 16a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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